Scientists develop high-performance transistor models and circuits useful for space and defense applications
Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF) circuits owing to its high breakdown voltage. Radio Frequency circuits include amplifiers and switches, which are used in wireless transmission and are useful for space and defense applications . As AlGaN/GaN HEMTs can also extend the power level of solid-state microwave circuits by a factor of five to ten, resulting in an appreciable reduction in the overall chip size and cost, the standard developed can significantly reduce the development cost of the circuits and devices for transmitting high-frequency signals. The technology is rapidly gaining popularity owing to its high performance and efficiency. It has two excellent properties – high mobility and high-power performance. These properties reduce...